PART |
Description |
Maker |
2SB1215 2SB1215S-TL-E 2SB1215T-E 2SB1215T-H 2SB121 |
Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V HCMOS family characteristics
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Philips Semiconductors NXP Semiconductors
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EN3096A EN3096 |
Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP High-Voltage Switching Applications
|
ON Semiconductor Sanyo Semicon Device
|
FMMT491TA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
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FCX491 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
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ZXTN25060BFHTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
|
ZXTN25100BFHTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
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FZT851 FZT851QTA FZT851TA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
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ZX5T953GQTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
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IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247 TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 8A条(丁)|05AF TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 4.9AI(四)| TO - 220AB现有 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 1A条(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五(巴西)直| 28A条(丁)|04AE TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 600毫安(丁)|50VAR TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五(巴西)直|5A条(丁)|04AE
|
Black Box, Corp. Bourns, Inc. Vishay Intertechnology, Inc. Samsung Semiconductor Co., Ltd. 3M Company
|
2N5682 2N5681 2N5681SMD |
100V Vce, 1A Ic, 30MHz NPN bipolar transistor NPN SILICON TRANSISTORS Expitaxial Planar NPN Transistors In jedec TO-39 Metal Case(大功率、外延平面NPN晶体管(TO-39金属封装,用于通用、放大器、开关电路))
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SEME-LAB[Seme LAB] Semelab(Magnatec)
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